| PART |
Description |
Maker |
| GT40Q32306 GT40Q323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT60M32306 GT60M323 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40Q321 |
Injection Enhanced Gate Transistor Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
|
TOSHIBA[Toshiba Semiconductor]
|
| GT40T321 |
Consumer Application Voltage Resonance Inverter Switching Application
|
Toshiba Semiconductor
|
| GT40G121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GSMBD2004 |
S U R FA C E MO U N T, SWI T C H I NG D I O D E V O LTAG E 3 0 0 V, C U R R E N T 0 . 2 2 5 A
|
E-Tech Electronics LTD
|
| CP-SNT55W |
Swi tchmode power suppl ies 瑞东tchmode权力suppl载体
|
Electronic Theatre Controls, Inc.
|
| ATC700A ATC700A6R8JW150XI ATC700A6R8JW150XTV |
High Self-Resonance
|
List of Unclassifed Manufacturers
|
| MR1721 MR1520 |
Partial Resonance PS IC
|
Shindengen Electric
|
| EG1125 |
Pseudo-resonance constant voltage switch
|
Jingjing Microelectroni...
|
| MR2920 |
(MR2000 Series) Partial Resonance Power Supply IC
|
Shindengen
|
